DEVELOPMENT OF TRANSPARENT, CONDUCTIVE THIN FILM COATINGS ON THE BASIS OF METALS

Abstract

The object of the study are thin films of metal oxides (zinc, tin), obtained by magnetron deposition. The electrophysical properties of thin films of metal oxide semiconductors ZnO and SnO₂ are investigated. Technological regimes for obtaining metal oxide films by the method of reactive magnetron sputtering are worked out. In the process of obtaining the films, the technological parameters-the substrate temperatures, the pressure and the gas atmosphere during the deposition process, the discharge power, were changed. The dependences of the transparency and resistivity of tin oxide and zinc oxide films on the temperature of the substrate and the concentration of oxygen in the working gas are investigated, and the optimal parameters of the film production process are determined. The observed dependences are explained by the change in the composition of the films and by the deviation from stoichiometry. The dependences of the film properties on the annealing temperature, on the gas composition of the atmosphere during annealing are determined. High-transparency metal oxide films with low electrical resistance were obtained.

Keywords: ZnO and SnO₂ metal oxides, electrical resistance, electrophysical properties.