INFLUENCE OF LASER EXCITATION ON Еg OF POROUS SILICON, GOT IN ELECTROLYTE OF HF/ ETHOXYETANOL

Abstract

This paper examines the effect of different sources of laser radiation on the structure of porous silicon, as well as their impact on changing the band gap. The band gap of porous silicon obtained in the electrolyte HF / ethoxyethanol is limited to 2 eV, owing to the predominance of the exciton recombination. Found that the radiation is formed in nanocrystallites of different sizes (clusters), the electronic spectrum is modified by quantum-effect.